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Electrical characterization of thin InAs films grown on patterned substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Formation of Stranski–Krastanow islands along tungsten lines at ( deposition). (b) Formation of mesa ridges in between lines at ( deposition). (c) Overgrown circle showing preferential overgrowth direction to be 30° of the [011] direction, corresponding to grating directed at 30° from the direction ( deposition). (d) SEM image of cross section of the overgrown ( deposition) tungsten pattern, with two tungsten lines shown as white contrast.

Image of FIG. 2.
FIG. 2.

TEM images of (a) interface between InAs and GaAs of the reference device. (b) Interface between of the overgrown structure. The arrows mark the SK island and the threading dislocation, originating from the island. The interface of the metal patterned device is smoother and leads to less stacking faults at the interface in between the metal pattern structure.

Image of FIG. 3.
FIG. 3.

characterizations of the overgrown devices. (a) Layout of the directions on the sample. (b) Schematic structure of the overgrown devices. (c) characteristics of overgrown devices and references. Numbers in the legend stand for the period of the -wide tungsten lines.

Image of FIG. 4.
FIG. 4.

Hall effect measurement results: (a) carrier density and (b) mobility as a function of the tungsten coverage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of thin InAs films grown on patterned W∕GaAs substrates