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Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications
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10.1116/1.3225596
/content/avs/journal/jvstb/27/5/10.1116/1.3225596
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/5/10.1116/1.3225596

Figures

Image of FIG. 1.
FIG. 1.

Stack structures for STI, poly-Si, and contact application.

Image of FIG. 2.
FIG. 2.

Evaluation of etch-clean delay time on post-etch residue removal and substrate loss for STI structures using TEM [(A) and (B)] and SEM [(C) and (F)] (1% HF, 2 s exposure time.)

Image of FIG. 3.
FIG. 3.

Evaluation of delay time on residue removal after a TEOS hardmask-based poly-Si etch for a HF clean with exposure time resulting in 0.6 nm of oxide loss.

Image of FIG. 4.
FIG. 4.

Evaluation of delay time on residue removal after a TEOS hardmask-based poly-Si etch for a more aggressive HF clean resulting in 2.6 nm of oxide loss.

Image of FIG. 5.
FIG. 5.

Evaluation of HF concentration and net cleaning exposure (concentration × time) on residue removal for a poly-Si/PECVD gate etch with integrated wet clean.

Image of FIG. 6.
FIG. 6.

Evaluation of net cleaning exposure on residue removal with a 24 h delay between poly-Si/PECVD gate etch and wet clean. [Compare to Figs. 4(E)–4(H).]

Image of FIG. 7.
FIG. 7.

Influence of the storage condition relative humidity (RH) on the cleanability of residues generated in a detuned etch process for a poly-Si/TEOS stack (24 h delayed clean, 1% HF, 2 s exposure time).

Image of FIG. 8.
FIG. 8.

Post-etch residue aging in a cleanroom ambient environment studied by thermodesorption mass spectrometry for primary species (A) and temperature ranges (B).

Image of FIG. 9.
FIG. 9.

Within-wafer distribution of contact resistance for 90 nm Kelvin and chain structures as a function of delay time between dry etch/strip and APM clean, showing deteriorated performance with no or delayed cleaning.

Image of FIG. 10.
FIG. 10.

Within-wafer distribution of contact resistance for 90 nm contact chain structures, comparing integrated vs delayed wet clean for APM and HF cleaning chemistries.

Image of FIG. 11.
FIG. 11.

(a) HAADF TEM and (b) EELS evaluations of postcontact etch residue removal. The circled areas indicate an interfacial layer observed under the contact.

Tables

Generic image for table
TABLE I.

Compatibility of HF and APM with different materials in the contact film stack: material loss (nm) for a 2 s chemical exposure time.

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/content/avs/journal/jvstb/27/5/10.1116/1.3225596
2009-10-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/5/10.1116/1.3225596
10.1116/1.3225596
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