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Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition
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10.1116/1.3237147
/content/avs/journal/jvstb/27/6/10.1116/1.3237147
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3237147
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM top views and tilted view of (a) a Pt box grown by means of IBID. (b) The central part is removed by milling with the same FIB settings, then a marker layer is grown via EBID (black layer) plus an IBID protection layer. (c) Cross section. (d) Sketch of the experimental setup with ion incident angle θ and energy . (e) Measurement of the secondary electron current and the energy spectrum of secondary electron with and without a positive bias .

Image of FIG. 2.
FIG. 2.

(a) Normalized secondary electron yield , sputtering yield , and deposition yield as functions of the ion incident angle θ for three different ion energies . (b) Correlation between and . (c) Correlation between and .

Image of FIG. 3.
FIG. 3.

Normalized secondary electron yield , sputtering yield , and deposition yield as functions of ion energy for an ion incident angle θ.

Image of FIG. 4.
FIG. 4.

Observed energy spectra of secondary electrons (SEs) during IBID for different ion incident angles and ion energies.

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/content/avs/journal/jvstb/27/6/10.1116/1.3237147
2009-12-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Roles of secondary electrons and sputtered atoms in ion-beam-induced deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3237147
10.1116/1.3237147
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