SEM top views and tilted view of (a) a Pt box grown by means of IBID. (b) The central part is removed by milling with the same FIB settings, then a marker layer is grown via EBID (black layer) plus an IBID protection layer. (c) Cross section. (d) Sketch of the experimental setup with ion incident angle θ and energy . (e) Measurement of the secondary electron current and the energy spectrum of secondary electron with and without a positive bias .
(a) Normalized secondary electron yield , sputtering yield , and deposition yield as functions of the ion incident angle θ for three different ion energies . (b) Correlation between and . (c) Correlation between and .
Normalized secondary electron yield , sputtering yield , and deposition yield as functions of ion energy for an ion incident angle θ.
Observed energy spectra of secondary electrons (SEs) during IBID for different ion incident angles and ion energies.
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