Schematic design of prototype of perturbed FSS on freestanding PI membrane.
Fabrication process of FSS on freestanding PI membranes. [(a)–(f)] Back-side patterning to form mask for the membrane. [(g)–(k)] Front-side patterning to form FSS features. [(l)–(m)] Deep etching step to etch the Si rigid substrate and the protective layer.
Far-field reflection coefficient of perturbed FSS vs frequency for length of the strips of subarray 1 fixed at and subarray 2 ranging from .
Simulated reflection coefficient vs frequency by full-wave MoM. (a) Unperturbed FSS (, , , and ). (b) Simply perturbed FSS (, , , , and ). (c) Doubly perturbed FSS (, , , , , and ). (d) Triply perturbed FSS (, , , , , , and ). (e) Strip-ring FSS (, , , , and ).
Optical microscope pictures of the fabricated FSS corresponding to the simulated designs of Fig. 4.
Fabricated FSS prototypes before, during, and after the deep etching step. (a) FSS before deep etching step. (b) FSS after deep Si etching and before wet etching (rough membrane). (c) FSS after wet etching (flat membrane).
Transmission FTIR measurements of (a) PI, (b) unperturbed, (c) simply perturbed, and (d) ring-strip FSS compared with MoM simulations under vertically polarized incident wave; in (b) and (c) simulations under elliptical polarization are also included.
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