Lithographically directed surface modification
(a) Polar surface energy vs exposure dose at 157 nm for -alkylsiloxane-modified silicon surfaces. (b) Polar surface energy vs exposure dose at 157 nm for bulky alkyl-, aryl-, and substituted arylsiloxane-modified silicon surfaces. The curves are exponential fits.
(a) Calculated exposure dose vs position aerial image of our 157 nm interference exposure system for three average exposure doses. (b) Calculated through conversion of exposure dose from (a) into vs position.
Polar surface energy aerial images for an exposed -butylsiloxane-modified silicon surface (top). Corresponding SEMs of annealed PS--PMMA films on patterned -butylsiloxane-modified silicon surfaces at the indicated exposure dose (bottom).
(a) Polar surface energy slope vs exposure dose and (b) average surface energy difference vs exposure dose for exposed -butylsiloxane-modifed silicon surfaces showing exposure doses that directed the assembly of defect-free PS--PMMA (●), exposure doses that resulted in PS--PMMA films with defects (○), and exposure doses that did not result in perpendicular, directed PS--PMMA assembly (×).
Average polar surface energy (defined over a 22 nm wide window centered at 45 nm, ) vs average polar surface energy (defined over a 22 nm wide window centered at 0 nm, ) for -butyl-(●,○), hexyl-(◆,◇), and octylsiloxane (▲,△) modified silicon surfaces showing surface energy combinations that resulted in defect-free assembly of annealed PS--PMMA films (filled symbols) and those with moderate defects (open symbols).
Polar surface energy vs 193 nm exposure dose for a variety of alkyl- and arylsiloxane-modified silicon surfaces. The curves are exponential fits.
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