Evaluations of the hopping growth characteristics on three-dimensional nanostructure fabrication using focused ion beam
Scanning speed dependency of growth structure deposited by analog one-pass scanning using FIB. (a) SIM images of carbon nanostructure fabricated at scanning speeds of (i) , (ii) , (iii) , (iv) , and (v) . (b) Scanning speed dependence of growth mode of nanostructure fabricated by analog one-pass scanning on FIB-CVD. (c) Scanning speed dependency of first hopping pitch (the inset shows a schematic of the length measured as a first hopping pitch).
SEM image and SIM image of (i) side view and (ii) top view of a hopping growth structure.
Growth characteristics of wall structure fabricated by analogue multipass scanning. (a) SIM images of wall structures fabricated at an ion dose of (i) , (ii) , and (iii) . (b) Growth rate change on vertical direction. The inset shows a ion doze dependency of a growth height.
Hopping growth process. (a) Sequence of SIM images of a hopping growth process captured at intervals of . These images were obtained by changing the scanning length adjusted using the scanning time calculated in incremental steps of (i) , (ii) , (iii) , (iv) , and (v) . (b) Schematics of the hopping growth process at elapsed times of (i) , (ii) , and (iii) . The positional relationship between the FIB and the upper and lower structures was defined by the central position of the FIB, growth edge position of the upper, and width of the FIB-irradiated area on the Si substrate.
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