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Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)
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10.1116/1.3253534
/content/avs/journal/jvstb/27/6/10.1116/1.3253534
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3253534
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Arrhenius dependence of BCN deposition rate on deposition temperature for N-rich BCN on Si(100) and Ge(100) and C-rich BCN on Si(100).

Image of FIG. 2.
FIG. 2.

MIS capacitor curves showing hysteresis for (a) C-rich and (b) N-rich BCN. No PDA or PMA was performed for these devices.

Image of FIG. 3.
FIG. 3.

(a) and (b) curves of MIS capacitors for BCN films deposited at 325, 375, and . Devices received PDA and PMA.

Image of FIG. 4.
FIG. 4.

(a) and (b) curves of MIS capacitors for BCN films deposited at 275 and . Devices received PDA but no PMA.

Image of FIG. 5.
FIG. 5.

Frenkel–Poole emission plot of ln vs for MIS capacitors on BCN-passivated -Si(100) and -Ge(100) at various BCN deposition temperatures.

Image of FIG. 6.
FIG. 6.

Optical bandgap of BCN films deposited on (a) Si(100) and (b) Ge(100) substrates at various temperatures.

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/content/avs/journal/jvstb/27/6/10.1116/1.3253534
2009-11-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3253534
10.1116/1.3253534
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