Arrhenius dependence of BCN deposition rate on deposition temperature for N-rich BCN on Si(100) and Ge(100) and C-rich BCN on Si(100).
MIS capacitor curves showing hysteresis for (a) C-rich and (b) N-rich BCN. No PDA or PMA was performed for these devices.
(a) and (b) curves of MIS capacitors for BCN films deposited at 325, 375, and . Devices received PDA and PMA.
(a) and (b) curves of MIS capacitors for BCN films deposited at 275 and . Devices received PDA but no PMA.
Frenkel–Poole emission plot of ln vs for MIS capacitors on BCN-passivated -Si(100) and -Ge(100) at various BCN deposition temperatures.
Optical bandgap of BCN films deposited on (a) Si(100) and (b) Ge(100) substrates at various temperatures.
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