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Design for electron beam: A novel approach to electron beam direct writing throughput enhancement for volume production
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View: Figures


Image of FIG. 1.
FIG. 1.

DFEB design flow. We create the EB friendly design layout data by tracing back to upstream design flow.

Image of FIG. 2.
FIG. 2.

With the recombination of CP components we can create new cells.

Image of FIG. 3.
FIG. 3.

(Color online) By adjusting the projection position of the first aperture through beam with mask deflector, the size of projection beam can be varied.

Image of FIG. 4.
FIG. 4.

PCP conversion can afford more cell variations with less CP.

Image of FIG. 5.
FIG. 5.

LP test chips were designed with both of DFEB and original cell library.

Image of FIG. 6.
FIG. 6.

DFEB stencil design was fixed.

Image of FIG. 7.
FIG. 7.

Number of cells in DFEB cell library is largely selected from the original library.

Image of FIG. 8.
FIG. 8.

DFEB area penalty in full chip level is estimated to be around 3%.

Image of FIG. 9.
FIG. 9.

I/O test signal shows no difference of function between two chips.

Image of FIG. 10.
FIG. 10.

DFEB exposure results show the good shot count reduction performance.

Image of FIG. 11.
FIG. 11.

exposure images show the enough resolution potential of CP.

Image of FIG. 12.
FIG. 12.

Pattern deformation by coulomb interaction is apparent.

Image of FIG. 13.
FIG. 13.

As opening area increases, the dose latitude largely decreases.

Image of FIG. 14.
FIG. 14.

Dose margin largely depends on the opening area of CP.

Image of FIG. 15.
FIG. 15.

Shot count reduction rate in DFEB is estimated to be approximately ten times.

Image of FIG. 16.
FIG. 16.

Shot count reduction rate in each macropart is estimated.

Image of FIG. 17.
FIG. 17.

Exposure time comparison results show the high performance of DFEB.


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Scitation: Design for electron beam: A novel approach to electron beam direct writing throughput enhancement for volume production