Design for electron beam: A novel approach to electron beam direct writing throughput enhancement for volume production
DFEB design flow. We create the EB friendly design layout data by tracing back to upstream design flow.
With the recombination of CP components we can create new cells.
(Color online) By adjusting the projection position of the first aperture through beam with mask deflector, the size of projection beam can be varied.
PCP conversion can afford more cell variations with less CP.
LP test chips were designed with both of DFEB and original cell library.
DFEB stencil design was fixed.
Number of cells in DFEB cell library is largely selected from the original library.
DFEB area penalty in full chip level is estimated to be around 3%.
I/O test signal shows no difference of function between two chips.
DFEB exposure results show the good shot count reduction performance.
exposure images show the enough resolution potential of CP.
Pattern deformation by coulomb interaction is apparent.
As opening area increases, the dose latitude largely decreases.
Dose margin largely depends on the opening area of CP.
Shot count reduction rate in DFEB is estimated to be approximately ten times.
Shot count reduction rate in each macropart is estimated.
Exposure time comparison results show the high performance of DFEB.
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