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Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and gate dielectric
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10.1116/1.3256229
/content/avs/journal/jvstb/27/6/10.1116/1.3256229
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3256229

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross sectional TEM micrograph showing the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. No clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed. (b) HAADF micrograph superimposed on their corresponding EELS line scan profile showing a clear area of overlap between the signals of the elements in the GaAs substrate and the aluminum oxide layer. (c) Frequency dispersion behavior of the GaAs MOS capacitor from the nontreated sample, showing a clear . (d) High resolution-HAADF image of the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. (e) HRTEM image of the same region from (d), in both cases no clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed.

Image of FIG. 2.
FIG. 2.

(a) Cross sectional TEM micrograph showing the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. No clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed. (b) HAADF micrograph superimposed on their corresponding EELS line scan profile showing a clear area of overlap between the signals of the elements in the GaAs substrate and the aluminum oxide layer. (c) Frequency dispersion behavior of the GaAs MOS capacitor from the HF-only treated sample, showing a lower . (d) High resolution-HAADF image of the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. (e) HRTEM image of the same region from (d), in both cases no clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed.

Image of FIG. 3.
FIG. 3.

(a) Cross sectional TEM micrograph showing the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. No clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed. (b) HAADF micrograph superimposed on their corresponding EELS line scan profile showing a clear area of overlap between the signals of the elements in the GaAs substrate and the aluminum oxide layer. (c) Frequency dispersion behavior of the GaAs MOS capacitor from the treated sample, showing an even lower . (d) High resolution-HAADF image of the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. (e) HRTEM image of the same region from (d), in both cases no clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed.

Image of FIG. 4.
FIG. 4.

(a) Cross sectional TEM micrograph showing the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. No clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed. (b) HAADF micrograph superimposed on their corresponding EELS line scan profile showing the smallest area of overlap between the signals of the elements in the GaAs substrate and the aluminum oxide layer. (c) Frequency dispersion behavior of the GaAs MOS capacitor from the treated sample, showing the lowest from the four samples analyzed. (d) High resolution-HAADF image of the interface between the GaAs substrate, the aluminum oxide layer, and the TaN layer. (e) HRTEM image of the same region from (d), in both cases no clear interfacial layer and a sharp transition between the GaAs substrate and the aluminum oxide layer can be observed.

Image of FIG. 5.
FIG. 5.

(a) HRTEM micrograph showing the two different areas where the two EELS spectra were recorded. (b) EELS spectra showing the O EELS characteristic peak from the black point (black diamonds) and the gray point (gray squares). An additional peak (marked by the black arrow) can be observed in the spectrum from the gray point, close to the center of the aluminum oxide layer.

Tables

Generic image for table
TABLE I.

Summary of the surface treatments performed on the different samples prior to deposition of the aluminum oxide layer and the postdeposition anneal step followed.

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/content/avs/journal/jvstb/27/6/10.1116/1.3256229
2009-11-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3256229
10.1116/1.3256229
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