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Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and gate dielectric
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10.1116/1.3256229
/content/avs/journal/jvstb/27/6/10.1116/1.3256229
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3256229
/content/avs/journal/jvstb/27/6/10.1116/1.3256229
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/content/avs/journal/jvstb/27/6/10.1116/1.3256229
2009-11-10
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3256229
10.1116/1.3256229
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