(Color online) Representation of the negative patterning process using the pixelated thin films on silicon wafer for controlling the CD and LER of patterned features.
NMR graphs of the as-casted (a), and UV exposed and baked (b) thin films on silicon wafer.
Top-down SEM images and the graphs for the width of features vs the designed width for the processed resist films (a) and conventional PMMA resist films (b) on silicon wafer using e-beam lithography. The exposed widths of the SEM images were designed as 140, 180, 220, and 260 nm (left to right and top to bottom).
Top-down SEM images of the processed thin films on topographically patterned silicon wafer using e-beam lithography with controlled width of the pattern and graph for the comparison of the width of patterned features vs the designed exposed width.
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