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Control of the critical dimensions and line edge roughness with pre-organized block copolymer pixelated photoresists
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10.1116/1.3256632
/content/avs/journal/jvstb/27/6/10.1116/1.3256632
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3256632
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Representation of the negative patterning process using the pixelated thin films on silicon wafer for controlling the CD and LER of patterned features.

Image of FIG. 2.
FIG. 2.

NMR graphs of the as-casted (a), and UV exposed and baked (b) thin films on silicon wafer.

Image of FIG. 3.
FIG. 3.

Top-down SEM images and the graphs for the width of features vs the designed width for the processed resist films (a) and conventional PMMA resist films (b) on silicon wafer using e-beam lithography. The exposed widths of the SEM images were designed as 140, 180, 220, and 260 nm (left to right and top to bottom).

Image of FIG. 4.
FIG. 4.

Top-down SEM images of the processed thin films on topographically patterned silicon wafer using e-beam lithography with controlled width of the pattern and graph for the comparison of the width of patterned features vs the designed exposed width.

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/content/avs/journal/jvstb/27/6/10.1116/1.3256632
2009-12-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of the critical dimensions and line edge roughness with pre-organized block copolymer pixelated photoresists
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3256632
10.1116/1.3256632
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