CASINO modeling of the origin of BSE in silicon due to a primary electron beam.
Images of the Pt surface at grain boundaries. Left: XHR SEM. Right: HIM.
Image gray level from 36 elemental test samples measured in HIM, SE mode. The beam energy was . The equation displays the result of a linear fit to the data.
Images comparing contrast levels. Top row, left to right: CHO cells and a DRAM cross section imaged by HIM. Bottom row: the same samples, imaged by SEM.
Voltage contrast imaging of fully processed integrated circuit device with a coating. Left: SEM. Right: HIM.
SE spectra generated by SEM (data from Ref. 8) and by HIM.
Images of iron phosphate on porous silica. Left: BSE image from SEM, coated sample. Right: HIM image from uncoated sample.
Experimental (dots) and calculated (line) helium backscatter data for the elements. The primary beam energy was .
SE (left) and RBI (right) HIM images of a solder joint.
TRIM computed trajectories for He ions backscattered from Cu. Scale is in angstroms. (a) Scaled to show complete path of backscattered particles. (b) Plot of smaller region at beam impact point (note the compressed scale). Lines: backscattered He; points: implanted He.
Images captured from combination detector. (a) Top-side SE, (b) bright field, (c) bottom-side SE, and (d) dark field.
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