1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask
Rent:
Rent this article for
USD
10.1116/1.3265468
/content/avs/journal/jvstb/27/6/10.1116/1.3265468
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3265468
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Illustration of the processing steps of fabricating GaAs nanowires.

Image of FIG. 2.
FIG. 2.

SEM image of nanoparticles on the GaAs substrate exceeding the concentration of .

Image of FIG. 3.
FIG. 3.

SEM image of nanoparticles on the GaAs substrate without spin coating of methanol.

Image of FIG. 4.
FIG. 4.

SEM image of the monolayer of nanoparticles on the GaAs substrate with spin coating of methanol. The diameter of sphere is .

Image of FIG. 5.
FIG. 5.

(a) SEM image of GaAs nanowires etched by ICP-RIE for . The diameter of GaAs nanowires is about . (b) Side-view SEM image of GaAs nanowires etched by ICP-RIE for . The length of GaAs nanowires is about . (c) SEM image of GaAs nanowires etched by ICP-RIE for . The diameter of GaAs nanowires is about . (d) Side-view SEM image of GaAs nanowires etched by ICP-RIE for . The length of GaAs nanowires is about .

Loading

Article metrics loading...

/content/avs/journal/jvstb/27/6/10.1116/1.3265468
2009-11-19
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/27/6/10.1116/1.3265468
10.1116/1.3265468
SEARCH_EXPAND_ITEM