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Electrical characterization of InGaAs ultra-shallow junctions
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10.1116/1.3231492
/content/avs/journal/jvstb/28/1/10.1116/1.3231492
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3231492

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of a M4PP measuring close to the edge of a cleaved wafer.

Image of FIG. 2.
FIG. 2.

Illustration of the four electrode combinations , , , and , which are used in micro Hall effect measurements. Adapted from Ref. 3.

Image of FIG. 3.
FIG. 3.

Pseudo sheet resistance normalized to the direct sheet resistance with different contributions to the geometrical magnetoresistance.

Image of FIG. 4.
FIG. 4.

Relative error of the pseudo sheet resistance approximation for different contributions to the geometrical magnetoresistance.

Image of FIG. 5.
FIG. 5.

Dopant concentration of the U19 and U44 samples measured using SIMS.

Image of FIG. 6.
FIG. 6.

M4PP with L-shaped cantilevers for static contact and strain gauge for surface detection.

Image of FIG. 7.
FIG. 7.

Comparison of sheet resistance measured using VDP and M4PP, respectively. The samples measured were doped with and Si implanted at 50 keV.

Image of FIG. 8.
FIG. 8.

(Color online) 20 × 20 points area scan of the U19 sample (19 nm junction depth). The scan was performed with an L-shaped cantilever M4PP and the measurement points were measured in a random sequence.

Image of FIG. 9.
FIG. 9.

(Color online) 361 points sheet resistance wafer maps of the U19 (a) and U44 (b) samples performed with standard M4PP. The average wafer sheet resistances were calculated to be 533.1 Ω/sq ± 4.3% and 105.5 Ω/sq ± 0.9%. For both measurements, the points were measured in a random sequence.

Tables

Generic image for table
TABLE I.

Basic equations describing four-point measurements on a conductive sheet with one insulating boundary parallel to the line of the four contacts (Refs. 2 and 3).

Generic image for table
TABLE II.

Comparison of Hall effect measurements performed with conventional Hall effect method and micro Hall effect method on four different samples.

Generic image for table
TABLE III.

Hall carrier mobility measured on the U19 sample at three different magnetic flux densities.

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/content/avs/journal/jvstb/28/1/10.1116/1.3231492
2010-03-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of InGaAs ultra-shallow junctions
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3231492
10.1116/1.3231492
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