Electrical characterization of InGaAs ultra-shallow junctions
Schematic illustration of a M4PP measuring close to the edge of a cleaved wafer.
Illustration of the four electrode combinations , , , and , which are used in micro Hall effect measurements. Adapted from Ref. 3.
Pseudo sheet resistance normalized to the direct sheet resistance with different contributions to the geometrical magnetoresistance.
Relative error of the pseudo sheet resistance approximation for different contributions to the geometrical magnetoresistance.
Dopant concentration of the U19 and U44 samples measured using SIMS.
M4PP with L-shaped cantilevers for static contact and strain gauge for surface detection.
Comparison of sheet resistance measured using VDP and M4PP, respectively. The samples measured were doped with and Si implanted at 50 keV.
(Color online) 20 × 20 points area scan of the U19 sample (19 nm junction depth). The scan was performed with an L-shaped cantilever M4PP and the measurement points were measured in a random sequence.
(Color online) 361 points sheet resistance wafer maps of the U19 (a) and U44 (b) samples performed with standard M4PP. The average wafer sheet resistances were calculated to be 533.1 Ω/sq ± 4.3% and 105.5 Ω/sq ± 0.9%. For both measurements, the points were measured in a random sequence.
Basic equations describing four-point measurements on a conductive sheet with one insulating boundary parallel to the line of the four contacts (Refs. 2 and 3).
Comparison of Hall effect measurements performed with conventional Hall effect method and micro Hall effect method on four different samples.
Hall carrier mobility measured on the U19 sample at three different magnetic flux densities.
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