Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
Arsenic SIMS profiles obtained on the samples implanted with As ions and doses of and [(a) left] and and [(b) right]. Curves aligned at the interface.
Sheet resistance measured in van der Pauw geometry on the samples implanted at with different As doses in function of the postlaser annealing thermal treatment. The hollow symbols at refer to the etched samples.
Active carrier doses determined by Hall effect measurements on the samples implanted at in function of the post-LA thermal treatment temperature. The hollow symbols at refer to the etched samples.
Fourier transform of EXAFS functions and relative least-squares fits for samples: as implanted (1), LA (2), LA (3), LA (4), and the reference.
Fourier transform of EXAFS functions for implanted sample series. From the bottom: only laser annealed sample, , , , , and surface-etched reference. The curves are vertically shifted for clarity.
Active arsenic fraction (defined as the ratio between Hall-effect measured active carrier and SIMS-evaluated retained doses) and fractions of the As complexes from the least-squares EXAFS fits determined on the “only laser annealed” samples.
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