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Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
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10.1116/1.3242637
/content/avs/journal/jvstb/28/1/10.1116/1.3242637
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3242637

Figures

Image of FIG. 1.
FIG. 1.

Arsenic SIMS profiles obtained on the samples implanted with As ions and doses of and [(a) left] and and [(b) right]. Curves aligned at the interface.

Image of FIG. 2.
FIG. 2.

Sheet resistance measured in van der Pauw geometry on the samples implanted at with different As doses in function of the postlaser annealing thermal treatment. The hollow symbols at refer to the etched samples.

Image of FIG. 3.
FIG. 3.

Active carrier doses determined by Hall effect measurements on the samples implanted at in function of the post-LA thermal treatment temperature. The hollow symbols at refer to the etched samples.

Image of FIG. 4.
FIG. 4.

Fourier transform of EXAFS functions and relative least-squares fits for samples: as implanted (1), LA (2), LA (3), LA (4), and the reference.

Image of FIG. 5.
FIG. 5.

Fourier transform of EXAFS functions for implanted sample series. From the bottom: only laser annealed sample, , , , , and surface-etched reference. The curves are vertically shifted for clarity.

Tables

Generic image for table
TABLE I.

Active arsenic fraction (defined as the ratio between Hall-effect measured active carrier and SIMS-evaluated retained doses) and fractions of the As complexes from the least-squares EXAFS fits determined on the “only laser annealed” samples.

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/content/avs/journal/jvstb/28/1/10.1116/1.3242637
2010-03-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3242637
10.1116/1.3242637
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