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Chloride ion detection by InN gated high electron mobility transistors
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10.1116/1.3271253
/content/avs/journal/jvstb/28/1/10.1116/1.3271253
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3271253
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross section schematic of the HEMT. (b) Microscope image of the gate region of HEMT.

Image of FIG. 2.
FIG. 2.

Real time source-drain current at a constant bias of as different concentrations of ions were added.

Image of FIG. 3.
FIG. 3.

Drain current change of InN gated HEMT as a function of ion concentration of solutions prepared with NaCl and HCl.

Image of FIG. 4.
FIG. 4.

Real time source-drain current when sensor is dipped in HCl, NaCl, and solutions of .

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/content/avs/journal/jvstb/28/1/10.1116/1.3271253
2010-01-20
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chloride ion detection by InN gated AlGaN∕GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3271253
10.1116/1.3271253
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