(a) Cross section schematic of the HEMT. (b) Microscope image of the gate region of HEMT.
Real time source-drain current at a constant bias of as different concentrations of ions were added.
Drain current change of InN gated HEMT as a function of ion concentration of solutions prepared with NaCl and HCl.
Real time source-drain current when sensor is dipped in HCl, NaCl, and solutions of .
Article metrics loading...
Full text loading...