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Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency capacitively coupled plasmas
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10.1116/1.3276701
/content/avs/journal/jvstb/28/1/10.1116/1.3276701
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3276701
/content/avs/journal/jvstb/28/1/10.1116/1.3276701
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/content/avs/journal/jvstb/28/1/10.1116/1.3276701
2010-01-13
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2∕H2∕Ar capacitively coupled plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3276701
10.1116/1.3276701
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