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Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency capacitively coupled plasmas
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10.1116/1.3276701
/content/avs/journal/jvstb/28/1/10.1116/1.3276701
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3276701
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Etch rates of the SiON and EUV resists etched for under (varied)/ (varied)/ Ar.

Image of FIG. 2.
FIG. 2.

FE-SEM images of the patterned wafers etched for under Ar and values of (a) 0.3 and (b) 0.6.

Image of FIG. 3.
FIG. 3.

(Color online) Variation in the CD size and LER of the EUV resist etched for under (varied)/ (varied)/ Ar. Before etching, the average CD and LER values were and , respectively.

Image of FIG. 4.
FIG. 4.

(Color online) XPS spectra obtained from the etched blanket SiON layer: (a) C , (b) F , (c) Si , (d) N , and (e) O . The samples were etched for under (varied)/ (varied)/ Ar.

Image of FIG. 5.
FIG. 5.

(Color online) XPS spectra obtained from the etched blanket EUV resist: (a) C and (b) F . The samples were etched for under (varied)/ (varied)/ Ar.

Image of FIG. 6.
FIG. 6.

(Color online) Composition variation in the etched surfaces with various values of : (a) ratio of the EUV resist, (b) ratio of SiON, (c) of SiON, (d) ratio of SiON, and (e) ratio of SiON.

Image of FIG. 7.
FIG. 7.

(Color online) Steady-state thickness of the layer calculated from the XPS spectra of the SiON and Si surfaces as a function of .

Image of FIG. 8.
FIG. 8.

(Color online) Etch rates of the SiON and EUV resists etched for under (varied)/ Ar.

Image of FIG. 9.
FIG. 9.

(Color online) Variation in the CD size and LER of the EUV resist etched for under (varied)/ Ar.

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/content/avs/journal/jvstb/28/1/10.1116/1.3276701
2010-01-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2∕H2∕Ar capacitively coupled plasmas
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/1/10.1116/1.3276701
10.1116/1.3276701
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