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Molecular beam epitaxial growth effects on type-II antimonide lasers and photodiodes
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Image of FIG. 1.
FIG. 1.

Integrated PL intensities at for a series of ICL active regions grown at various temperatures and BEP. Data are normalized to the output from the sample with the highest integrated intensity.

Image of FIG. 2.
FIG. 2.

FWHM widths of the PL spectral lines at for the same ICL active regions as a function of growth temperature and BEP.

Image of FIG. 3.
FIG. 3.

Calculated equilibrium band diagrams for graded-gap photodiodes with the same underlying SL design but three different absorber doping levels. The doping in the absorber SL is graded upward near the layer, in order to prevent any electron accumulation due to band bending.

Image of FIG. 4.
FIG. 4.

Effective dynamic impedance for large-area photodiodes with different actual doping levels, as determined by measurements.

Image of FIG. 5.
FIG. 5.

Current-voltage characteristics for multiple devices fabricated from two the samples with low and near-target doping levels.


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Extracted Auger coefficients and other properties of nine five-stage ICLs with a range of emission wavelengths. The values were obtained from analysis of the threshold current densities and slope efficiencies as discussed in Ref. 7, assuming a fixed internal quantum efficiency of 64% obtained from a cavity length study on one of the samples. Apart from the characteristic and maximum cw operating temperatures given at the right, all properties were obtained from the pulsed operation of broad -wide ridges ( cavity length) at . Experimental maximum cw operating temperature are listed for the only two wafers from which narrow ridges have been processed to date.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxial growth effects on type-II antimonide lasers and photodiodes