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Growth, characterization, and uniformity analysis of 200 mm wafer-scale
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) RHEED patterns observed during the STO/Si MBE process: (a) Si substrate, (b) Si substrate after deoxidation, (c) STO buffer layer along the [110] direction, (d) STO buffer layer after annealing along [110] direction, and (e) STO bulk layer along the [110] direction.

Image of FIG. 2.
FIG. 2.

(Color online) XRD spectrum of a 120 nm thick STO epilayer on Si.

Image of FIG. 3.
FIG. 3.

Thickness dependence of the x-ray rocking curve STO (002) peak FWHM.

Image of FIG. 4.
FIG. 4.

(Color online) AFM images of STO thin films with thicknesses of (a) 25 nm and (b) 120 nm; the lateral scan size is and the vertical scale is 1.5 nm.

Image of FIG. 5.
FIG. 5.

(Color online) (a) XRD fringe pattern used in the STO thickness calculation; the inset is a schematic representation of thickness variation across the 200 mm wafer. (b) Uniformity plot of XRD FWHM and AFM rms for 120 nm STO.

Image of FIG. 6.
FIG. 6.

Cross-sectional TEM of 25 nm STO layer on .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si