Growth, characterization, and uniformity analysis of 200 mm wafer-scale
(Color online) RHEED patterns observed during the STO/Si MBE process: (a) Si substrate, (b) Si substrate after deoxidation, (c) STO buffer layer along the  direction, (d) STO buffer layer after annealing along  direction, and (e) STO bulk layer along the  direction.
(Color online) XRD spectrum of a 120 nm thick STO epilayer on Si.
Thickness dependence of the x-ray rocking curve STO (002) peak FWHM.
(Color online) AFM images of STO thin films with thicknesses of (a) 25 nm and (b) 120 nm; the lateral scan size is and the vertical scale is 1.5 nm.
(Color online) (a) XRD fringe pattern used in the STO thickness calculation; the inset is a schematic representation of thickness variation across the 200 mm wafer. (b) Uniformity plot of XRD FWHM and AFM rms for 120 nm STO.
Cross-sectional TEM of 25 nm STO layer on .
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