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Controlled growth of (100) or (111) CdTe epitaxial layers on (100) GaAs by molecular beam epitaxy and study of their electron spin relaxation times
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10.1116/1.3336144
/content/avs/journal/jvstb/28/3/10.1116/1.3336144
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3336144

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Shutter operation sequences for selective growth of (a) (100) and (b) (111) CdTe on (100) ZnSe/GaAs.

Image of FIG. 2.
FIG. 2.

(Color online) RHEED patterns obtained during MBE growth of CdTe on (100) ZnSe/GaAs structures. (a), (c), and (e) are taken along the azimuth of (100) ZnSe, while (b), (d), and (f) are taken along the [011] azimuth of (100) ZnSe. (a) and (b) are for the (100) ZnSe surface, (c) and (d) are for the (100) CdTe surface, and (e) and (f) are for the (111) CdTe surface.

Image of FIG. 3.
FIG. 3.

(Color online) Photoluminescence spectra at 77 K from (a) (100) and (b) (111) CdTe grown on (100) ZnSe/GaAs substrates.

Image of FIG. 4.
FIG. 4.

(Color online) Single crystal x-ray diffraction scans for (a) (100) CdTe and (b) (111) CdTe layers grown on (100) ZnSe/GaAs substrates.

Image of FIG. 5.
FIG. 5.

(Color online) TRKR measurements for (100) CdTe and (111) CdTe at different temperatures.

Image of FIG. 6.
FIG. 6.

(Color online) Spin relaxation rate as a function of DCXRC linewidth. The solid squares and open circles are for (111) and (100) CdTe, respectively.

Tables

Generic image for table
TABLE I.

Summary of sample properties for different shutter sequences.

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/content/avs/journal/jvstb/28/3/10.1116/1.3336144
2010-03-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled growth of (100) or (111) CdTe epitaxial layers on (100) GaAs by molecular beam epitaxy and study of their electron spin relaxation times
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3336144
10.1116/1.3336144
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