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Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production
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10.1116/1.3368600
/content/avs/journal/jvstb/28/3/10.1116/1.3368600
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3368600
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) X-ray diffraction data for layers grown on sapphire substrates at high (a) and low (b) growth temperatures. RBS/PIXE measurements estimate that the As concentrations in layers are (a) and (b).

Image of FIG. 2.
FIG. 2.

SAED pattern from a series of GaNAs samples with increasing As content from 10% to 70% showing crystalline to amorphous transition (a). A typical cross-sectional TEM micrograph of an amorphous film (; ) (b).

Image of FIG. 3.
FIG. 3.

(Color online) Energy dependence of the square of the absorption coefficient for layers, grown at different temperatures from to . The As content in the GaNAs films was determined by combined RBS and PIXE measurements.

Image of FIG. 4.
FIG. 4.

(Color online) Soft XAS and SXE results for GaNAs samples grown at different temperatures from to .

Image of FIG. 5.
FIG. 5.

(Color online) Optical band gap of the films as a function of the overall As content measured by RBS/PIXE. Calculated composition dependence of the band gap of alloys based on the BAC model, virtual crystal approximation and using a single bowing parameter extracted from dilute alloys are also shown. Reported results (Ref. 10) for As-rich GaNAs alloys are also presented.

Image of FIG. 6.
FIG. 6.

(Color online) Comparison of the optical absorption data from two samples with comparable composition grown on glass and sapphire.

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/content/avs/journal/jvstb/28/3/10.1116/1.3368600
2010-03-26
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3368600
10.1116/1.3368600
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