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Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
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10.1116/1.3368607
/content/avs/journal/jvstb/28/3/10.1116/1.3368607
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3368607

Figures

Image of FIG. 1.
FIG. 1.

Normalized 10 K spectra of the QDIP samples with different InAs coverages.

Image of FIG. 2.
FIG. 2.

(a) 10 K PLE spectra with the PL peak energy as the detection energy and (b) shifted PLE spectra by setting the detection energies as zero of the QDIP samples.

Image of FIG. 3.
FIG. 3.

Simplified band structures and the different transition mechanisms in PL/PLE spectra of the QDIP samples.

Image of FIG. 4.
FIG. 4.

10 K spectral responses of the four QDIP samples biased at 0.6 V.

Tables

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TABLE I.

Sample structure of the QDIPs with different InAs coverages.

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/content/avs/journal/jvstb/28/3/10.1116/1.3368607
2010-03-25
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3368607
10.1116/1.3368607
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