(Color online) (a) Schematic of the sample structure; (b) the ion-beam image of the sample before FIB cuttings.
(Color online) (a) Measurement of the SWNT membrane thickness using AFM; (b) ion-beam image after FIB cutting in the center of an SWNT beam at 30 keV, 50 pA, ; (c) optical microscope picture before FIB cutting; (d) optical microscope picture of the sample after FIB patterning; (f) Raman spectra of an SWNT membrane before and after FIB bombardment.
Influence of FIB dose on stress of patterned SWNT membranes. (a) Sample before FIB patterning, where the rectangles labeled from 1 to 5 are the areas for FIB cutting. (b) Ion-beam image after FIB cutting, where the doses on the rectangles 1 to 5 are , , , , and , respectively.
(a) SEM image of a nanoscale SWNT beam prepared by FIB cutting; (b) SEM image of a nanoscale SWNT cantilever prepared by FIB cutting.
(Color online) (a) Ion-beam image of a fabricated nanoswitch by FIB cutting; (b) pull-in characteristics of nanoswitch with a pull-in voltage of 7.8 V.
SEM image of a failed sample after actuation-release cycles; the two SWNT cantilevers curled and connected through a small fraction of SWNTs.
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