Molecular-beam epitaxy growth of site-controlled InAs/GaAs quantum dots defined by soft photocurable nanoimprint lithography
(Color online) AFM image of nanoimprint-patterned GaAs substrate by wet etching. The nanopores are on a 200 nm pitch and the white bar is long.
(Color online) AFM line scans of patterned nanopores prior to QD regrowth, after atomic hydrogen cleaning at , and after 10, 30, and 50 ML GaAs buffer-layer deposition.
(Color online) AFM images of SCQDs grown with different GaAs buffer-layer thicknesses: (a) 10 ML, (b) 30 ML, and (c) 50 ML.
(Color online) [(a)–(c)] AFM images of SCQDs and [(d)–(f)] SAQDs grown at different arsenic overpressures: [(a) and (d)] , [(b) and (e)] , and [(c) and (f)] .
(Color online) Room-temperature photoluminescence spectra of SCQDs grown at different arsenic overpressures: (a) (solid line), (b) (dashed line), and (c) (short dashed line).
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