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Molecular-beam epitaxy growth of site-controlled InAs/GaAs quantum dots defined by soft photocurable nanoimprint lithography
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10.1116/1.3414824
/content/avs/journal/jvstb/28/3/10.1116/1.3414824
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3414824
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM image of nanoimprint-patterned GaAs substrate by wet etching. The nanopores are on a 200 nm pitch and the white bar is long.

Image of FIG. 2.
FIG. 2.

(Color online) AFM line scans of patterned nanopores prior to QD regrowth, after atomic hydrogen cleaning at , and after 10, 30, and 50 ML GaAs buffer-layer deposition.

Image of FIG. 3.
FIG. 3.

(Color online) AFM images of SCQDs grown with different GaAs buffer-layer thicknesses: (a) 10 ML, (b) 30 ML, and (c) 50 ML.

Image of FIG. 4.
FIG. 4.

(Color online) [(a)–(c)] AFM images of SCQDs and [(d)–(f)] SAQDs grown at different arsenic overpressures: [(a) and (d)] , [(b) and (e)] , and [(c) and (f)] .

Image of FIG. 5.
FIG. 5.

(Color online) Room-temperature photoluminescence spectra of SCQDs grown at different arsenic overpressures: (a) (solid line), (b) (dashed line), and (c) (short dashed line).

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/content/avs/journal/jvstb/28/3/10.1116/1.3414824
2010-04-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular-beam epitaxy growth of site-controlled InAs/GaAs quantum dots defined by soft photocurable nanoimprint lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3414824
10.1116/1.3414824
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