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Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition
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10.1116/1.3425633
/content/avs/journal/jvstb/28/3/10.1116/1.3425633
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3425633

Figures

Image of FIG. 1.
FIG. 1.

Deposition rates of SiC film as a function of flow rate.

Image of FIG. 2.
FIG. 2.

Dielectric constant and refractive index of SiC film as a function of flow rate.

Image of FIG. 3.
FIG. 3.

(Color online) Leakage current densities of SiC films deposited at various flow rates before and after annealing. Annealing condition is for 2 h in ambient.

Image of FIG. 4.
FIG. 4.

Slope of Cu concentration cure and diffusion depth of Cu in SiC film as a function of flow rate after annealing obtained from SIMS.

Image of FIG. 5.
FIG. 5.

(Color online) Statistics distribution of breakdown field for SiC films deposited at various flow rates. Test structures are -annealed TaN/Cu/SiC/Si MIS capacitors.

Image of FIG. 6.
FIG. 6.

(Color online) Breakdown failure time of SiC film as a function of flow rate. Test structures are -annealed TaN/Cu/SiC/Si MIS capacitors.

Image of FIG. 7.
FIG. 7.

Adhesion strength of SiC films as a function of flow rate. Films were deposited on a Cu film, Si substrate, and low-dielectric film, respectively.

Image of FIG. 8.
FIG. 8.

(Color online) Electromigration failure time distribution for Cu lines capped with SiC films deposited at various flow rates.

Tables

Generic image for table
TABLE I.

Composition of SiC film as a function of flow rate.

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/content/avs/journal/jvstb/28/3/10.1116/1.3425633
2010-05-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/3/10.1116/1.3425633
10.1116/1.3425633
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