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Simulations of radical and ion fluxes on a wafer in a inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments
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10.1116/1.3437492
/content/avs/journal/jvstb/28/4/10.1116/1.3437492
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3437492
/content/avs/journal/jvstb/28/4/10.1116/1.3437492
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/content/avs/journal/jvstb/28/4/10.1116/1.3437492
2010-06-28
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulations of radical and ion fluxes on a wafer in a Cl2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3437492
10.1116/1.3437492
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