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Simulations of radical and ion fluxes on a wafer in a inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments
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10.1116/1.3437492
/content/avs/journal/jvstb/28/4/10.1116/1.3437492
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3437492

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the industrial inductively coupled SPTS Multiplex plasma source.

Image of FIG. 2.
FIG. 2.

Model geometry of the ICP reactor.

Image of FIG. 3.
FIG. 3.

Calculated ion and radical fluxes along the wafer for an 80:20 plasma at 600 W and 5 mTorr.

Image of FIG. 4.
FIG. 4.

Calculated ion and radical fluxes to the substrate as a function of source power, for an 80:20 plasma at 5 mTorr.

Image of FIG. 5.
FIG. 5.

SEM images of GaAs [(a) and (b)] and GaN [(c) and (d)] samples etched in an 80:20 plasma at 5 mTorr, for source powers of 300 [(a) and (c)] and 600 W [(b) and (d)].

Image of FIG. 6.
FIG. 6.

Calculated ion and radical fluxes to the substrate as a function of gas pressure for an 80:20 plasma at 600 W.

Image of FIG. 7.
FIG. 7.

SEM images of GaAs samples etched in an 80:20 plasma at 600 W, for pressures of 5 (a) and 20 mTorr (b).

Image of FIG. 8.
FIG. 8.

Calculated ion and radical fluxes to the substrate as a function of the ratio for a plasma at 300 W and 10 mTorr.

Image of FIG. 9.
FIG. 9.

SEM micrographs of GaAs [(a)–(c)] and GaN [(d)–(f)] samples etched in a plasma at 300 W and 5 mTorr, for 100% Ar [(a) and (d)], 20% [(b) and (e)], and 100% [(c) and (f)].

Tables

Generic image for table
TABLE I.

Volume reactions considered in the model.

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/content/avs/journal/jvstb/28/4/10.1116/1.3437492
2010-06-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulations of radical and ion fluxes on a wafer in a Cl2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3437492
10.1116/1.3437492
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