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Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms
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10.1116/1.3456182
/content/avs/journal/jvstb/28/4/10.1116/1.3456182
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3456182
/content/avs/journal/jvstb/28/4/10.1116/1.3456182
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/content/avs/journal/jvstb/28/4/10.1116/1.3456182
2010-07-16
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3456182
10.1116/1.3456182
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