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High-aspect-ratio deep Si etching in plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns
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10.1116/1.3466794
/content/avs/journal/jvstb/28/4/10.1116/1.3466794
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3466794

Figures

Image of FIG. 1.
FIG. 1.

Representative example of lateral etching in deep Si etching.

Image of FIG. 2.
FIG. 2.

(Color online) Representative examples of shot maps for samples.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic cross-sectional view of an etched profile and definitions of geometrical parameters.

Image of FIG. 4.
FIG. 4.

Dependence of etched profiles on rf bias. Patterns widths were and length was . rf bias was 50 W for (a) and 35 W for (b).

Image of FIG. 5.
FIG. 5.

(Color online) Dependence of etched depth of rectangular holes on aspect ratio of patterns for two values of rf bias. Logarithmic functions clearly fit data for both cases.

Image of FIG. 6.
FIG. 6.

Dependence of etched profile on stage temperature for rectangular holes. The stage temperature was set at (i) , (ii) , (iii) , and (iv) .

Image of FIG. 7.
FIG. 7.

(Color online) Etched depth of rectangular holes and square holes as a function of stage temperature. Lines are drawn only to guide the eye.

Image of FIG. 8.
FIG. 8.

(Color online) OES intensity of (a) SiF and (b) F radicals during the etching of a typical sample as a function of elapsed time.

Image of FIG. 9.
FIG. 9.

(Color online) Correlation between the optical emission intensities for F radicals and SiF radicals for various samples at various elapsed times.

Image of FIG. 10.
FIG. 10.

(Color online) Dependence of etched depth on time-integrated F radical intensity. The etched depth is measured for a rectangular hole.

Image of FIG. 11.
FIG. 11.

(Color online) ARDE at two etching times (250 and 1250 s) for (a) a D sample (, no blank field) and (b) an E sample (, with blank fields)

Image of FIG. 12.
FIG. 12.

(Color online) Results of experiment and simulation for ARDE. In the simulation, the reaction probability at sidewalls was set at 0 and the reaction probability at the bottom was varied.

Image of FIG. 13.
FIG. 13.

(Color online) Results of experiment and simulation for ARDE. In the simulation, was varied and was set at 0.4.

Image of FIG. 14.
FIG. 14.

(Color online) Results of experiment and simulation for ARDE. In this simulation, was set at 0.005 and was varied.

Image of FIG. 15.
FIG. 15.

(Color online) Dependence of passing probability on probability of sticking to (or reacting with) sidewalls in rectangular holes with several aspect ratios.

Image of FIG. 16.
FIG. 16.

(Color online) Correlation between the etched volume for the whole wafer and time-integrated intensity of SiF radicals. Note that D sample has only high-aspect-ratio features.

Tables

Generic image for table
TABLE I.

Variations of patterns and EARs for the photomasks used to create the masks.

Generic image for table
TABLE II.

Variation of shot maps and EARs for the wafers. The size of one shot is . See Table I regarding the mask names.

Generic image for table
TABLE III.

Reaction probability and surface loss probability (the sum of probabilities of reaction and recombination) at around room temperature. For a uniform definition of the values, the reaction product is assumed to be .

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2010-07-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-aspect-ratio deep Si etching in SF6/O2 plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3466794
10.1116/1.3466794
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