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High-aspect-ratio deep Si etching in plasma. II. Mechanism of lateral etching in high-aspect-ratio features
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10.1116/1.3466884
/content/avs/journal/jvstb/28/4/10.1116/1.3466884
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3466884

Figures

Image of FIG. 1.
FIG. 1.

Representative examples of lateral etching in deep Si etching. Etching times are (a) 250 s and (b) 1250 s.

Image of FIG. 2.
FIG. 2.

(Color online) Representative examples of the shot maps of samples.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic cross-sectional view of an etched profile and definitions of geometrical parameters.

Image of FIG. 4.
FIG. 4.

How the to ratio affects etched profiles of (a) rectangular holes and (b) square holes. The ratios are (i) 0.63, (ii) 0.71, (iii) 0.83, and (iv) 1.0, respectively.

Image of FIG. 5.
FIG. 5.

(Color online) Amount of lateral etching and the difference between widths at the top and bottom as a function of ratio for rectangular holes. Curves are drawn only to guide the eye.

Image of FIG. 6.
FIG. 6.

How stage temperature affects the etched profiles of (a) rectangular holes and (b) square holes. The stage temperatures were (i) , (ii) , (iii) , and (iv) .

Image of FIG. 7.
FIG. 7.

(Color online) Amount of lateral etching and the difference between width at the top and at the bottom for a rectangular hole as functions of the ratio. Curves are drawn only to guide the eye.

Image of FIG. 8.
FIG. 8.

(Color online) Data from simulation of (a) number of collisions of F radicals with sidewalls and (b) number of radicals sticking to sidewalls with varied as a parameter. The simulated structure was a -wide, -long, and -deep rectangular hole.

Image of FIG. 9.
FIG. 9.

Typical etched profiles for (a) B , (b) C , and (c) D ( , with blank fields) samples. The pattern is for holes wide and long.

Image of FIG. 10.
FIG. 10.

(Color online) OES intensities for (a) SiF radicals and (b) F radicals as functions of elapsed time during the etching of typical samples.

Image of FIG. 11.
FIG. 11.

How adding flows of gas affects etched profiles: flow rates of gas are (a) , (b) , (c) , and (d) .

Image of FIG. 12.
FIG. 12.

Magnified views of the top regions of (b)–(e) in Fig. 11 .

Image of FIG. 13.
FIG. 13.

(Color online) Amount of lateral etching and the difference between width at the top and width at the bottom for a rectangular hole as functions of the flow of . Curves are drawn only to guide the eye.

Image of FIG. 14.
FIG. 14.

(Color online) Dependence of OES intensity of plasma components on flow. Each set of values for intensity was normalized on the maximum intensity for the given component. Curves are drawn only to guide the eye.

Image of FIG. 15.
FIG. 15.

(Color online) Ratio of lateral to vertical etching (lateral etching ratio, defined as ) as a function of aspect ratio for two etching times. Curves are drawn only to guide the eye.

Image of FIG. 16.
FIG. 16.

Magnified view of the top region of Fig. 9(a) . Additional broken lines have been drawn on and extended from the facets on the corners of the mask.

Image of FIG. 17.
FIG. 17.

Upper figures represent mask profiles that (a) have not and (b) have been exposed to Ar-sputtering before deep Si etching. Lower figures show the respective profiles after 250 s of deep Si etching. The insets are magnified views of corners of the masks.

Tables

Generic image for table
TABLE I.

Variation of shot maps and EAR for the wafers. The size of one shot is .

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/content/avs/journal/jvstb/28/4/10.1116/1.3466884
2010-07-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-aspect-ratio deep Si etching in SF6/O2 plasma. II. Mechanism of lateral etching in high-aspect-ratio features
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/4/10.1116/1.3466884
10.1116/1.3466884
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