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Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
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10.1116/1.3480961
/content/avs/journal/jvstb/28/5/10.1116/1.3480961
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3480961
/content/avs/journal/jvstb/28/5/10.1116/1.3480961
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/content/avs/journal/jvstb/28/5/10.1116/1.3480961
2010-09-07
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3480961
10.1116/1.3480961
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