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Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
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10.1116/1.3483165
/content/avs/journal/jvstb/28/5/10.1116/1.3483165
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3483165
/content/avs/journal/jvstb/28/5/10.1116/1.3483165
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/content/avs/journal/jvstb/28/5/10.1116/1.3483165
2010-08-27
2015-03-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3483165
10.1116/1.3483165
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