(Color online) Optical micrograph of typical HEMT device with dual gate. In terms of scale, the gate widths are .
(Color online) Gate curves before and after stress.
(Color online) Off-state gate current, stress gate current, and stress drain current as a function of stress gate voltage.
(Color online) Drain curves before and after stress.
(Color online) Transconductance characteristic of the AlGaN/GaN HEMTs before and after stress.
(Color online) PL spectra of stressed and unstressed devices.
EL images of stressed (right) and unstressed (left) gate fingers.
Cross section TEM images of gate finger before (a) and after (b) stress.
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