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Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
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10.1116/1.3491038
/content/avs/journal/jvstb/28/5/10.1116/1.3491038
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3491038
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Optical micrograph of typical HEMT device with dual gate. In terms of scale, the gate widths are .

Image of FIG. 2.
FIG. 2.

(Color online) Gate curves before and after stress.

Image of FIG. 3.
FIG. 3.

(Color online) Off-state gate current, stress gate current, and stress drain current as a function of stress gate voltage.

Image of FIG. 4.
FIG. 4.

(Color online) Drain curves before and after stress.

Image of FIG. 5.
FIG. 5.

(Color online) Transconductance characteristic of the AlGaN/GaN HEMTs before and after stress.

Image of FIG. 6.
FIG. 6.

(Color online) PL spectra of stressed and unstressed devices.

Image of FIG. 7.
FIG. 7.

EL images of stressed (right) and unstressed (left) gate fingers.

Image of FIG. 8.
FIG. 8.

Cross section TEM images of gate finger before (a) and after (b) stress.

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/content/avs/journal/jvstb/28/5/10.1116/1.3491038
2010-09-23
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3491038
10.1116/1.3491038
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