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Modified postannealing of the Ge condensation process for better-strained Si material and devices
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10.1116/1.3491186
/content/avs/journal/jvstb/28/5/10.1116/1.3491186
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3491186

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of the strained Si samples: sample A without a postannealing after the Ge condensation, sample B with a conventional postannealing at , and sample C with a modified postannealing at .

Image of FIG. 2.
FIG. 2.

XRD symmetric scan of the (004) reflection of (o) the as-deposited sample: (a) sample A without postannealing, (b) sample B with a conventional postannealing, and (c) sample C with a modified postannealing. The broader SiGe peaks are due to the gradient of the Ge profile in the oxidized samples. Sample C has a sharp and single SiGe peak which indicates a uniform element distribution.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of samples B and C. The Ge profiles across the layer as measured by EDS are also shown.

Image of FIG. 4.
FIG. 4.

Ge diffusion coefficient in Si as a function of annealing temperature.

Image of FIG. 5.
FIG. 5.

Phase diagram of SiGe alloy.

Image of FIG. 6.
FIG. 6.

High resolution TEM images of samples B and C. Several misfit dislocations are observed in sample B and most of them are inclined to {1 1 1} stacking faults, while defects are hardly found in sample C.

Image of FIG. 7.
FIG. 7.

(Color online) UV-Raman spectra comparing samples B and C.

Tables

Generic image for table
TABLE I.

Summary of oxidation and postannealing time for samples A–C.

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/content/avs/journal/jvstb/28/5/10.1116/1.3491186
2010-09-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modified postannealing of the Ge condensation process for better-strained Si material and devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3491186
10.1116/1.3491186
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