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Modified postannealing of the Ge condensation process for better-strained Si material and devices
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10.1116/1.3491186
/content/avs/journal/jvstb/28/5/10.1116/1.3491186
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3491186
/content/avs/journal/jvstb/28/5/10.1116/1.3491186
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/content/avs/journal/jvstb/28/5/10.1116/1.3491186
2010-09-21
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modified postannealing of the Ge condensation process for better-strained Si material and devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/5/10.1116/1.3491186
10.1116/1.3491186
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