Piezoelectrically driven silicon carbide resonators
(a) Butterworth–Van Dyke equivalent circuit. (b) Simulated impedance magnitude and phase at resonance.
Schematic diagram of the designed structures.
Schematic process flow for the fabrication of the piezoelectric SiC resonators.
Scanning electron micrograph (side view) of one of the fabricated SiC beams with a piezoelectric electrode placed on top.
(Color online) Simulations: displacement and resonant frequency as a function of the electrode length of a SiC cantilever long actuated piezoelectrically with a voltage of 0.5 V.
(Color online) Simulations: impedance change at resonance for different values of .
(Color online) Measurements: magnitude and phase with and .
(Color online) Measurements: magnitude and phase with decreasing.
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