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Piezoelectrically driven silicon carbide resonators
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10.1116/1.3498760
/content/avs/journal/jvstb/28/6/10.1116/1.3498760
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3498760
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Butterworth–Van Dyke equivalent circuit. (b) Simulated impedance magnitude and phase at resonance.

Image of FIG. 2.
FIG. 2.

Schematic diagram of the designed structures.

Image of FIG. 3.
FIG. 3.

Schematic process flow for the fabrication of the piezoelectric SiC resonators.

Image of FIG. 4.
FIG. 4.

Scanning electron micrograph (side view) of one of the fabricated SiC beams with a piezoelectric electrode placed on top.

Image of FIG. 5.
FIG. 5.

(Color online) Simulations: displacement and resonant frequency as a function of the electrode length of a SiC cantilever long actuated piezoelectrically with a voltage of 0.5 V.

Image of FIG. 6.
FIG. 6.

(Color online) Simulations: impedance change at resonance for different values of .

Image of FIG. 7.
FIG. 7.

(Color online) Measurements: magnitude and phase with and .

Image of FIG. 8.
FIG. 8.

(Color online) Measurements: magnitude and phase with decreasing.

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/content/avs/journal/jvstb/28/6/10.1116/1.3498760
2010-11-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Piezoelectrically driven silicon carbide resonators
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3498760
10.1116/1.3498760
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