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Defect-free etching process for GaAs/AlGaAs hetero-nanostructure using chlorine/argon mixed neutral beam
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10.1116/1.3499716
/content/avs/journal/jvstb/28/6/10.1116/1.3499716
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3499716
/content/avs/journal/jvstb/28/6/10.1116/1.3499716
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/content/avs/journal/jvstb/28/6/10.1116/1.3499716
2010-10-19
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect-free etching process for GaAs/AlGaAs hetero-nanostructure using chlorine/argon mixed neutral beam
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3499716
10.1116/1.3499716
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