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Effect of Al doping on resistive switching behavior of films for nonvolatile memory application
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10.1116/1.3501109
/content/avs/journal/jvstb/28/6/10.1116/1.3501109
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3501109
/content/avs/journal/jvstb/28/6/10.1116/1.3501109
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/content/avs/journal/jvstb/28/6/10.1116/1.3501109
2010-10-19
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3501109
10.1116/1.3501109
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