(Color online) (a) Cartoon of the electrode patterns for DEP assembly of (a) individual SWNTs and (b) 2D arrays of SWNTs. 2D simulated electric field around the electrode gap for (c) the taper shaped electrodes and (d) parallel plate electrodes.
(Color online) AFM image of nanotubes assembled between the electrodes with SWNT concentrations of (a) 1000 ng/ml (b) 100 ng/ml, and (c) 10 ng/ml in the solution. Scale bar: in all images. (d) Histogram of diameters for over 100 nanotube devices.
[(a)-(l)] SEMs of several individual SWNT assembled via DEP from commercial solution at a concentration of . Gap between the electrodes is .
(Color online) Representative AFM images of SWNTs assembled via DEP (a) from DMF solution, (b) from DCE solution, and (c) the Brewer Science solution.
(Color online) (a) Current vs gate voltage characteristics for semiconducting and metallic devices. Inset: Schematic diagram of device geometry and measurement setup showing a SWNT between source and drain. (b) Histogram of the contact resistance for metallic devices as-assembled (blue) and metallic devices after annealing (red). (c) Transfer characteristics of a representative SWNT FET device at , −0.5, −1.0, and −2.0 V. Inset: Output characteristics showing currents up to in the saturation regime. is changed from −10 to 10 V in steps of 1 V from bottom to top. (d) Histogram of the mobility for semiconducting devices after annealing. The mobility is on average and the maximum mobility is for measured devices.
(Color online) (a) SEM image of a part of a SWNT aligned array device. (b) vs back gate voltage at constant of −0.5 V after successive electrical breakdown. (c) A representative plot of drain current vs source-drain voltage for three sequential breakdowns (first, second, and third break) (d) Plot of on-off ratios and corresponding mobility for several measured devices after each breakdown.
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