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Integration of block copolymer directed assembly with 193 immersion lithography
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10.1116/1.3501348
/content/avs/journal/jvstb/28/6/10.1116/1.3501348
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3501348
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic illustration of the proposed method.

Image of FIG. 2.
FIG. 2.

Tilted SEM images of photoresist profile on different thicknesses of silicon nitride films. Note that the bright layer is a combination of X-PS and silicon nitride.

Image of FIG. 3.
FIG. 3.

Top-down SEM images of photoresist (a) before and (b) after trim etch and (c) block copolymer after directed assembly.

Image of FIG. 4.
FIG. 4.

Top-down SEM image of assembled structures of BCP with a large area of perfection. PMMA has not been removed; thus, the linewidth may be visually inaccurate.

Image of FIG. 5.
FIG. 5.

(a) Top-down SEM image after PMMA removal. (b) Tilted cross-sectional image after pattern transfer.

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/content/avs/journal/jvstb/28/6/10.1116/1.3501348
2010-11-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Integration of block copolymer directed assembly with 193 immersion lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3501348
10.1116/1.3501348
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