DLC cantilever structure fabricated by FIB-CVD. (a) SIM image of DLC cantilever fabricated on two-terminal electrode and (b) schematic showing (i) front view and (ii) side view of DLC cantilever structure during bending experiment. Strains were applied to the DLC cantilever using a glass capillary.
curves of untreated DLC cantilever fabricated by FIB-CVD. These curves were measured during the bending of the DLC cantilever at distances of 1, 2, 3, 4, and .
Schematic of the fine structure of DLC (a) before and (b) after Ga elimination.
Annealing effect on DLC nanopillar. (a) STEM images of DLC nanopillars (i) before annealing treatment and after annealing at for (ii) 12 and (iii) 24 h and (b) change in atomic and ratios.
Electrical characteristics of DLC cantilever annealed at for 12 h. (a) Dependence of bending distance on electrical characteristics ( curves) and (b) relationship between strain , GF, and resistance change ratio . The dimension of the diamond symbol does not include the measurement error.
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