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Direct transformation of a resist pattern into a graphene field effect transistor through interfacial graphitization of liquid gallium
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10.1116/1.3511511
/content/avs/journal/jvstb/28/6/10.1116/1.3511511
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3511511
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Optical microscope images of (a) as-prepared NEB resist channel pattern, (b) carbonated NEB resist pattern at in vacuum, and (c) graphitized channel pattern at in vacuum.

Image of FIG. 2.
FIG. 2.

TEM images of (a) the graphene catalyzed at a 15 nm thick, stiff amorphous carbon film and (b) graphene catalyzed from carbonated NEB resist pattern at in vacuum.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Optical microscope image of the graphitized area under the gallium droplet. The squares indicate the test pads for current leakage. Leakage points tended to concentrate on the edge line of the gallium droplets. (b) Typical curve for the gate insulating layer.

Image of FIG. 4.
FIG. 4.

(Color online) curves of the gallium induced graphene channel. As-prepared conductance showed typical -type behavior (dotted line), but the curve shifted toward the left side by evacuation. Exposure in oxygen gas sensitively changed the curve to have the same tendency as the as-prepared one.

Image of FIG. 5.
FIG. 5.

(Color online) Typical curve and conductance modulation of a 3 nm thick channel fabricated at .

Image of FIG. 6.
FIG. 6.

(Color online) Shows the thickness dependencies of the channel conductance and the modulation ratio. The FET channel graphitized from 10 nm thick amorphous carbon showed very weak conductance modulation against the gate voltage. In contrast, decreasing the channel thickness remarkably decreased the source-drain current to the nanoampere order, but the modulation ratio improved up to 100%.

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/content/avs/journal/jvstb/28/6/10.1116/1.3511511
2010-11-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct transformation of a resist pattern into a graphene field effect transistor through interfacial graphitization of liquid gallium
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3511511
10.1116/1.3511511
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