Direct transformation of a resist pattern into a graphene field effect transistor through interfacial graphitization of liquid gallium
(Color online) Optical microscope images of (a) as-prepared NEB resist channel pattern, (b) carbonated NEB resist pattern at in vacuum, and (c) graphitized channel pattern at in vacuum.
TEM images of (a) the graphene catalyzed at a 15 nm thick, stiff amorphous carbon film and (b) graphene catalyzed from carbonated NEB resist pattern at in vacuum.
(Color online) (a) Optical microscope image of the graphitized area under the gallium droplet. The squares indicate the test pads for current leakage. Leakage points tended to concentrate on the edge line of the gallium droplets. (b) Typical curve for the gate insulating layer.
(Color online) curves of the gallium induced graphene channel. As-prepared conductance showed typical -type behavior (dotted line), but the curve shifted toward the left side by evacuation. Exposure in oxygen gas sensitively changed the curve to have the same tendency as the as-prepared one.
(Color online) Typical curve and conductance modulation of a 3 nm thick channel fabricated at .
(Color online) Shows the thickness dependencies of the channel conductance and the modulation ratio. The FET channel graphitized from 10 nm thick amorphous carbon showed very weak conductance modulation against the gate voltage. In contrast, decreasing the channel thickness remarkably decreased the source-drain current to the nanoampere order, but the modulation ratio improved up to 100%.
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