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Performance and reliability analysis of -type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal
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10.1116/1.3514103
/content/avs/journal/jvstb/28/6/10.1116/1.3514103
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3514103
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) and EOT comparison of Ru–Al-based metal gates. Al/Ru bilayer and RuAlN show the lowest value of and EOT, which are related to Al diffusion.

Image of FIG. 2.
FIG. 2.

(Color online) Normalized multiplied by EOT of Ru–Al-based metal gates measured on . Ru/Al bilayer shows degradation due to too much Al diffusion into interfacial , resulting in degraded interface quality.

Image of FIG. 3.
FIG. 3.

(Color online) Negative-bias temperature instability characteristics of Ru–Al-based metal gates measured at . Al/Ru bilayer shows the best NBTI characteristics.

Image of FIG. 4.
FIG. 4.

(Color online) Relaxation behavior of Ru–Al-based metal gates. The trap sites seem to form easily on Ru/Al bilayer compared with Al/Ru bilayer but it is reversible.

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/content/avs/journal/jvstb/28/6/10.1116/1.3514103
2010-11-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance and reliability analysis of p-type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3514103
10.1116/1.3514103
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