(Color online) and EOT comparison of Ru–Al-based metal gates. Al/Ru bilayer and RuAlN show the lowest value of and EOT, which are related to Al diffusion.
(Color online) Normalized multiplied by EOT of Ru–Al-based metal gates measured on . Ru/Al bilayer shows degradation due to too much Al diffusion into interfacial , resulting in degraded interface quality.
(Color online) Negative-bias temperature instability characteristics of Ru–Al-based metal gates measured at . Al/Ru bilayer shows the best NBTI characteristics.
(Color online) Relaxation behavior of Ru–Al-based metal gates. The trap sites seem to form easily on Ru/Al bilayer compared with Al/Ru bilayer but it is reversible.
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