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Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
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10.1116/1.3514117
/content/avs/journal/jvstb/28/6/10.1116/1.3514117
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3514117
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of the MBE-grown QW structure.

Image of FIG. 2.
FIG. 2.

HAADF-STEM images showing brighter -contrast for the individual InGaAs marker layers. Atomic resolution HAADF-STEM image (right) reveals almost atomically abrupt heteroepitaxial interfaces.

Image of FIG. 3.
FIG. 3.

RBS spectrum for the QW structure, acquired using a 9 MeV beam under normal incidence and 170° backscattering angle. Inset shows a close-up of the six individually resolved InGaAs marker layers (linear scale).

Image of FIG. 4.
FIG. 4.

SIMS depth profiles for selected positive ion species representing the GaAs matrix species and their respective O-cluster ions upon bombardment for different ion impact energies. The vertical arrow (left panel; 5 keV only) indicates the start of backfilling .

Image of FIG. 5.
FIG. 5.

SIMS (top) and (bottom) ion intensity ratios as a function of apparent depth upon ion beam sputtering at different ion impact energies.

Image of FIG. 6.
FIG. 6.

(a) Normalized -profiles (Atomika 4500) around the position of the second (104 Å), fourth (52 Å), and sixth (26 Å) InGaAs marker layers using 1 keV ion energy for different incident angles. (b) Exponential decay lengths derived from the slope at the trailing edge for the individual InGaAs marker layers as a function of depth.

Image of FIG. 7.
FIG. 7.

(a) Normalized -profiles (Atomika 4500) around the position of the second, fourth, and sixth InGaAs marker layers using 500 eV ion energy for different incident angles. (b) Exponential decay lengths as a function of depth.

Image of FIG. 8.
FIG. 8.

(a) Angular dependence of SIMS ion intensity ratios as a function of depth for 1 keV ion beam sputtering. (b) Angular dependence for 500 eV .

Image of FIG. 9.
FIG. 9.

Relative sputter yield derived from measured erosion rate for different impact conditions. Sputter yield data have been fitted by a equation (dashed lines) at higher oblique angles .

Image of FIG. 10.
FIG. 10.

(a) SIMS (Cameca Wf) In-concentration profiles (left axis) and characteristic GaAs matrix intensity profiles (right axis) for 1 keV impact energy and detection of cluster ions. (b) Linear correlation between aerial In-doses (SIMS) and/or thicknesses (TEM) for the individual InGaAs marker layers and MBE shutter opening time for InGaAs growth.

Image of FIG. 11.
FIG. 11.

(a) In-concentration profiles and GaAs matrix reference ion intensity profiles at 1 keV and 650 eV ion impact energy. Depth scale reconstruction has been established assuming a constant erosion rate while matching the spacing between the second and fourth InGaAs markers to the TEM spacing. (b) Close-up of In-profile around the first InGaAs marker layer, showing substantial depth resolution improvement at 650 eV impact energy. Note that 650 eV profile has been shifted in depth by 30 Å to align the leading edges.

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/content/avs/journal/jvstb/28/6/10.1116/1.3514117
2010-11-18
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3514117
10.1116/1.3514117
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