1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Relaxation of misfit strain in silicon-germanium () films during dry oxidation
Rent:
Rent this article for
USD
10.1116/1.3516014
/content/avs/journal/jvstb/28/6/10.1116/1.3516014
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3516014

Figures

Image of FIG. 1.
FIG. 1.

(Color online) HR-XRD spectrum of (a) oxidized at for various periods of time, (b) oxidized at for various periods of time, (c) oxidized at for various periods of hours, and (d) oxidized at for various periods of time. The simulated XRD peaks are plotted together as dotted curves.

Image of FIG. 2.
FIG. 2.

Vertical lattice parameters and average Ge concentration of Ge pile-up layers as a function of oxidation time. The lattice parameters were estimated from XRD spectra and the Ge concentrations were cited from our previous work (Ref. 10).

Image of FIG. 3.
FIG. 3.

Vertical lattice parameters of the remaining films after oxidation. The lattice parameters were estimated from the XRD spectra shown in Fig. 2.

Image of FIG. 4.
FIG. 4.

Cross-sectional TEM images of oxidized at for (a) 1, (b) 2, and (c) 4 h.

Image of FIG. 5.
FIG. 5.

(Color online) EDS depth profiles of films oxidized at for (a) 1 and (b) 4 h.

Image of FIG. 6.
FIG. 6.

(Color online) rms roughness for oxidized at 800 and for various oxidation times.

Tables

Generic image for table
TABLE I.

Relaxed and remnant misfit strains of Ge pile-up layers in films oxidized at .

Loading

Article metrics loading...

/content/avs/journal/jvstb/28/6/10.1116/1.3516014
2010-11-18
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relaxation of misfit strain in silicon-germanium (Si1−xGex) films during dry oxidation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/28/6/10.1116/1.3516014
10.1116/1.3516014
SEARCH_EXPAND_ITEM