Samples: (a) EBID-Pt, (b) IBID-Pt, (c) small area IBID-Pt, and (d) black ink-mask IBID-Pt. The techniques conducted are listed below each sample. Information about the dimensions can be acquired from the corresponding TEM pictures.
(Color online) HRTEM image of EBID-Pt film on a silicon substrate: (b) is an enlargement of the inset box of (a). It indicates that EBID-Pt results in little destruction, and thus, the native oxide layer remains with only slight damage at the interface toward the deposition region.
(Color online) (a) TEM (top) and STEM (bottom) images of cross-sectional IBID-Pt film on a Si substrate. The intensity profile as well as the EDS profile are depicted over the TEM and STEM images, respectively. (b) is one of the measured EDS profiles, where the Pt profile shows a valley in the middle area, indicating a decrease in Pt-concentration. and data were not sufficiently reproducible and their intensities are not drawn in (a).
Element maps obtained with EELS for IBID-Pt film on silicon substrate. The brightness represents the abundance of each element. The separate carbon and silicon maps match the unfiltered map (bright field image). The oxygen map does not provide any information about its abundance.
(Color online) (a) HAADF-STEM image, where the line and box indicate the scan line for STEM/EELS and the area for drift correction, respectively. (b) EELS spectrum showing -edge of carbon. (c) STEM intensity profile and (d) EELS line profile for carbon. Comparison of (c) and (d) indicates that the carbon-rich region coincides with the platinum-poor region.
(Color online) Results of Auger electron spectrometry for IBID-Pt film on silicon substrate: (a) as compared with the TEM micrograph; (b) enlarged upper part of the deposit as indicated by a red rectangle in (a); and (c) locally enlarged depth profile of the oxygen, indicated by a rectangle in (b). Clear depth profiles are obtained for all of the reacting elements, although with reduced spatial resolution.
(Color online) This figure exhibits four TEM images with differently magnified transition areas, zooming in at the region indicated by the square. As the damage layer becomes thinner, the sublayers show more distinct contrast, indicating that each sublayer is more segregated in composition.
(Color online) (a) shows stitched low-magnification TEM images of the IBID-Pt film sample, the left half of which is masked with carbon ink below the deposition. (b) is a magnified image of the box inlet in (a). The dotted line extrapolates the native oxide layer on the left. It clearly indicates that the white-band is located above the original interface.
(Color online) (a)–(f) schematically illustrate the IBID process when the focused Ga ion beam irradiates Pt-precursors adsorbed on the Si substrate in the order of time. The figure is self-explanatory, and Ga ions, precursors, and the oxide layer are not shown here.
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