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Mechanistic considerations of low temperature hydrogen-based plasma etching of Cu
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10.1116/1.3520461
/content/avs/journal/jvstb/29/1/10.1116/1.3520461
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3520461

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional SEM of masked, 100 nm Cu film after 8 min of plasma etching under the conditions , , 20 mTorr pressure, 50 SCCM flow rate, and electrode temperature [reproduced with permission from the American Chemical Society (Ref. 40)].

Image of FIG. 2.
FIG. 2.

Cross sectional SEMs of masked, 100 nm Cu films (a) after 8 min of He plasma and (b) after 4 min of plasma treatment. Plasma etching was performed under the conditions , , 20 mTorr pressure, 50 SCCM flow rate, and electrode temperature.

Image of FIG. 3.
FIG. 3.

Cu etch rates in plasma vs (a) platen power (rf1) when and (b) coil power (rf2) when . Other plasma etching conditions were 20 mTorr pressure, 50 SCCM flow, and electrode temperature.

Image of FIG. 4.
FIG. 4.

Cross sectional SEMs of masked, 180 nm Cu films (a) before and (b) after 8 min of plasma under the conditions , , 20 mTorr pressure, 50 SCCM flow rate, and electrode temperature.

Image of FIG. 5.
FIG. 5.

Cu etch rates and corresponding dc bias in plasma with normal power supplies, zero platen power , and zero coil power . Other parameters are 20 mTorr pressure, 50 SCCM flow rate, and electrode temperature in an STS SOE ICP reactor.

Tables

Generic image for table
TABLE I.

Comparison of melting points of copper compounds (Ref. 4).

Generic image for table
TABLE II.

Atomic emission lines (in angstroms) of , Ar, He, and Cl in the high energy regime (from Grotrian diagrams) (Ref. 49).

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/content/avs/journal/jvstb/29/1/10.1116/1.3520461
2011-01-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanistic considerations of low temperature hydrogen-based plasma etching of Cu
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3520461
10.1116/1.3520461
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