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Temperature dependence of the resistance switching effect studied on the metal/ planar junctions
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic representation of the Ag/YBCO planar junction. The wide silver upper-electrode lies across the wide YBCO bottom-electrode which is planarized by the insulating layer.

Image of FIG. 2.
FIG. 2.

Transport measurement of the Ag/YBCO planar junction. Current flowing across the junction was controlled in a form of the saw sweep with period up to 1000 s, while the voltage drop on the junction was measured.

Image of FIG. 3.
FIG. 3.

Typical characteristics of the Ag/YBCO planar junction. characteristics measured in the current bias mode with two resistive states at the temperature 250 K. Changes in resistive state occurred above certain threshold level. Resistance measured at is for the HRS and for the LRS. Inset: typical differential characteristics for HRS and LRS measured in narrow voltage range well bellow threshold voltage level.

Image of FIG. 4.
FIG. 4.

Tunneling barrier at the Ag/YBCO interface. Resistance of the Ag/YBCO junction at the temperature 300 K as the function of the fitted barrier width in the semilog plot. Classical tunneling barrier with given width and constant height is characterized by the exponential relation (Ref. 23) .

Image of FIG. 5.
FIG. 5.

Temperature dependence of the switching threshold voltage. Experimental data above 300 K were taken from Acha et al. (Ref. 7). While Acha et al. measured linear relation between the switching voltage and the temperature is in the of range 300–440 K, our dependence is in the range of 100–300 K is obviously nonlinear. Linear part of the dependence is in the range 200–440 K is fitted with the electro-diffusion (e-d) model presented in the text.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions