Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions
Trench first metallic hard mask architecture description: (a) line lithography with organic BARC, (b) Hard Mask etching, (c) via BARC/lithography, (d) partial via etch and resist removal, and (e) line etch and etch-stop layer opening followed by in situ , , or postetch treatments.
(a) Top CD SEM view of M2 after -SiOCH etching and (b) 24 h air exposure after etching (c) after etching followed by in situ , , or PET plus 24 h air exposure.
(a) Study of PET benefit on yield as a function of the waiting time between etch and wet steps: impact on defect formation (b) line and (c) via opens.
Impact of the FC etch chemistry time on PET efficiency to limit residue growth on TiN blanket wafer after 1 day air exposure for the following conditions: FC based plasma exposure set at 60 s (a) without and with PET (, , and based chemistries) addition (b) compared to FC based plasma set at 120 s followed by in situ (c) PET or (d) PET.
(a) Ti , (b) O , (c) C , (d) N , and (e) F spectra of TiN after 60 s FC based plasma exposures followed by either 30 s or in situ PET.
(Color online) (a) TiN surface composition summary after FC based plasma exposure plus (b) , (c) , or (d) in situ PET.
(a) Ti , (b) O , (c) C , (d) N , and (e) F spectra of TiN after fluorocarbon based plasma exposures followed by in situ PET (time varying form 15 to 220 s).
Top view of the (a) TiN after 1 day air exposure with prior FC plasma exposure followed by in situ PET with 27 MHz radio frequency set at (b) 150 W, (c) 300 W, and (d) 600 W with a fixed process time set at 15 s.
Summary of the TiN surface composition determined by XPS as a function of the different FC etching process times and postetch treatments.
XPS peak identification for the TiN surface.
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