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Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress
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10.1116/1.3532820
/content/avs/journal/jvstb/29/1/10.1116/1.3532820
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3532820

Figures

Image of FIG. 1.
FIG. 1.

Comparison of conventional and cAFM-based measurements for -type sample; different gate contact areas and tip directly on dielectric were used—destructive dielectric breakdown is indicated by bold circles.

Image of FIG. 2.
FIG. 2.

Weibull plot for 100 measurements on a sample and extraction of time-to-failure (63rd percentile) and Weibull slope parameter .

Image of FIG. 3.
FIG. 3.

Time-to-failure plots (assuming Weibull distribution) of different samples for CVS measurement on gate contacts and directly on dielectric, respectively.

Image of FIG. 4.
FIG. 4.

Measurement data for 8 nm sample with compensation for different work-function materials between gate electrode and cAFM tip; the respective slopes from voltage acceleration using Eq. (2) are listed.

Image of FIG. 5.
FIG. 5.

Evaluation of measurement data for sample; voltage and area extrapolation were performed.

Image of FIG. 6.
FIG. 6.

Evaluation of measurement data for sample; voltage and area extrapolation were performed.

Image of FIG. 7.
FIG. 7.

Evaluation of measurement data for sample; voltage and area extrapolation were performed.

Tables

Generic image for table
TABLE I.

Comparison of Weibull slope parameter from macroscopic CVS measurements and from microscopic cAFM stress tests.

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/content/avs/journal/jvstb/29/1/10.1116/1.3532820
2011-01-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3532820
10.1116/1.3532820
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