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Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress
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10.1116/1.3532820
/content/avs/journal/jvstb/29/1/10.1116/1.3532820
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3532820
/content/avs/journal/jvstb/29/1/10.1116/1.3532820
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/content/avs/journal/jvstb/29/1/10.1116/1.3532820
2011-01-19
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3532820
10.1116/1.3532820
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