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Reliability studies on high- dielectric metal-insulator-metal capacitors prepared by wet anodization
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10.1116/1.3532823
/content/avs/journal/jvstb/29/1/10.1116/1.3532823
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3532823
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Variation of characteristics with temperature.

Image of FIG. 2.
FIG. 2.

(Color online) Poole–Frenkel plots at positive applied voltage.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of extrapolated at zero applied field.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Arrhenius plots of and (b) Poole–Frenkel coefficient .

Image of FIG. 5.
FIG. 5.

Arrhenius plot of modified Poole–Frenkel coefficient .

Image of FIG. 6.
FIG. 6.

(Color online) Constant voltage stress on tantalum oxide MIM devices showing early breakdown.

Image of FIG. 7.
FIG. 7.

(a) Variation of time to breakdown, (b) charge to breakdown, and (c) current at breakdown with stress voltage.

Image of FIG. 8.
FIG. 8.

(Color online) Variation of voltage to retain the constant current with time.

Image of FIG. 9.
FIG. 9.

(Color online) characteristics after applying constant current stress. The magnified graphs at low fields in (a) are shown in (b).

Image of FIG. 10.
FIG. 10.

(Color online) Effect of stress time on oxide leakage current after constant current stress.

Image of FIG. 11.
FIG. 11.

(Color online) Variation of high frequency capacitance-voltage (HFCV) with constant current stress for 100 s.

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/content/avs/journal/jvstb/29/1/10.1116/1.3532823
2011-01-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reliability studies on Ta2O5 high-κ dielectric metal-insulator-metal capacitors prepared by wet anodization
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/29/1/10.1116/1.3532823
10.1116/1.3532823
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