Path to achieve sub-10-nm half-pitch using electron beam lithography
(Color online) Dependence of HSQ thickness (spin coated at 6000 rpm) on dilution ratio of the resist.
Schematic illustration of exposed track patterns with different pitch sizes.
SEM images of tracks at pitch of 100, 50, and 25 nm exposed in 53 nm resist thickness at different doses of (a) 500, (b) 250, (c) 200, and (d) .
Schematic illustration of the capillary force between the patterns.
(Color online) Schematic illustration of the relation between the following: capillary force, mechanical strength, pitch size, dose, and aspect ratio.
SEM images of 100, 50, and 25 nm pitch tracks exposed in 18 nm resist thickness at different doses of (a) 500, (b) 250, (c) 200, and (d) .
SEM images of dot arrays exposed in 30 nm resist thickness with 50 nm pitch size at different doses of (a) 15, (b) 25, (c) 35, and (d) .
SEM images of dot arrays exposed in 10 nm resist thickness at different doses of (a) 15, (b) 25, (c) 35, and (d) .
(Color online) Contrast curves for different HSQ thicknesses.
SEM image of a typical pattern of 200 dots used for calculating the contrast curve shown in Fig. 11 (pitch size of dots is 50 nm).
(Color online) Normalized number of remaining dots vs electron dose for different rates of dilution. The inset shows the contrast and sensitivity curve for different dilution of resists based on the proposed method.
SEM image of 10 nm dots at a pitch of 20 nm written in area.
SEM image of 25 nm pitch HSQ tracks written in an area of .
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