Nanostructured resistive memory cells based on 8-nm-thin films deposited by atomic layer deposition
(Color online) (a) Scheme of nanocrosspoint junction. (b) Micrograph of a set of identical test devices.
(Color online) Principle of atomic layer deposition.
(Color online) (a) Variations in the thickness of films grown at various temperatures as a function of number of cycles. The growth rate is 0.055 nm/cycle with negligible temperature dependence. (b) Variation in the layer density of Ti ions in the films per cycle as a function of pulse time for the injection of TTIP solution for films grown at with 100 cycles (taken from Ref. 24).
Cross-sectional HRTEM image of an 8-nm-thin film grown by ALD at using and as precursors (taken from Ref. 24).
(Color online) Initial measurement of a set of nanocrosspoint junctions after fabrication with amorphous films.
(Color online) Electroforming procedure: (a) characteristic of 25 memory cells using a delay time of 10 ms. (b) shows the corresponding resistance vs current plot. (c) and (d) show the and characteristics for the second set of 25 devices using a delay time of 100 ms.
(Color online) Histogram of the forming voltages during the electroforming procedure with delay times of (a) 10 and (b) 100 ms.
(Color online) (a) and (b) Examples of resistive switching curves from two different nanocrosspoint junctions.
(Color online) Resistance measurements after fast pulse switching to the LRS with and pulse durations of 10 and 50 ns.
Article metrics loading...
Full text loading...